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vishay siliconix si1035x document number: 71426 s10-2544-rev. c, 08-nov-10 www.vishay.com 1 complementary n- and p- channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet: 1.5 v rated ? very small footprint ? high-side switching ? low on-resistance: n-channel, 5 ? p-channel, 8 ? ? low threshold: 0.9 v (typ.) ? fast switching speed: 45 ns (typ.) ? 1.5 v operation ? gate-source esd protected: 2000 v ? compliant to rohs directive 2002/95/ec benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? low battery voltage operation applications ? replace digital transistor, level-shifter ? battery oper ated systems ? power supply converter circuits ? load/power switching cell phones, pagers product summary v ds (v) r ds(on) ( ? )i d (ma) n-channel 20 5 at v gs = 4.5 v 200 7 at v gs = 2.5 v 175 9 at v gs = 1.8 v 150 10 at v gs = 1.5 v 50 p-channel - 20 8 at v gs = - 4.5 v - 150 12 at v gs = - 2.5 v - 125 15 at v gs = - 1.8 v - 100 20 at v gs = - 1.5 v - 30 markin g code: m to p v ie w 3 1 d 2 g 2 s 1 5 2 4 6 d 1 s 2 g 1 sc-89 orderin g information: si1035x-t1-ge3 (lead (p b )-free and halogen-free) notes: a. surface mounted on fr4 board. b. pulse width limited by ma ximum junction temperature. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol n-channel p-channel unit 5 s steady state 5 s steady state drain-source voltage v ds 20 - 20 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) a t a = 25 c i d 190 180 - 155 - 145 ma t a = 85 c 140 130 - 110 - 105 pulsed drain current b i dm 650 - 650 continuous source current (diode conduction) i s 450 380 - 450 - 380 maximum power dissipation a t a = 25 c p d 280 250 280 250 mw t a = 85 c 145 130 145 130 operating junction and storage temperature range t j , t stg - 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v
www.vishay.com 2 document number: 71426 s10-2544-rev. c, 08-nov-10 vishay siliconix si1035x notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.40 v v ds = v gs , i d = - 250 a p-ch - 0.40 gate-body leakage i gss v ds = 0 v, v gs = 2.8 v n-ch 0.5 1.0 a p-ch 0.5 1.0 v ds = 0 v, v gs = 4.5 v n-ch 1.5 3.0 p-ch 1.0 3.0 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v n-ch 1 500 na v ds = - 16 v, v gs = 0 v p-ch - 1 - 500 v ds = 16 v, v gs = 0 v, t j = 85 c n-ch 10 a v ds = - 16 v, v gs = 0 v, t j = 85 c p-ch - 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v n-ch 250 ma v ds = - 5 v, v gs = - 4.5 v p-ch - 200 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 200 ma n-ch 5 ? v gs = - 4.5 v, i d = - 150 ma p-ch 8 v gs = 2.5 v, i d = 175 ma n-ch 7 v gs = - 2.5 v, i d = 125 ma p-ch 12 v gs = 1.8 v, i d = 150 ma n-ch 9 v gs = - 1.8 v, i d = - 100 ma p-ch 15 v ds = 1.5 v, i d = 40 ma n-ch 10 v ds = - 1.5 v, i d = - 30 ma p-ch 20 forward transconductance a g fs v ds = 10 v, i d = 200 ma n-ch 0.5 s v ds = - 10 v, i d = - 150 ma p-ch 0.4 diode forward voltage a v sd i s = 150 ma, v gs = 0 v n-ch 1.2 v i s = - 150 ma, v gs = 0 v p-ch - 1.2 dynamic b total gate charge q g n-channel v ds = 10 v, v gs = 4.5 v, i d = 150 ma p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 150 ma n-ch 750 pc p-ch 1500 gate-source charge q gs n-ch 75 p-ch 150 gate-drain charge q gd n-ch 225 p-ch 450 tu r n - o n t i m e t on n-channel v dd = 10 v, r l = 47 ? i d ? 250 ma, v gen = 4.5 v, r g = 10 ? n-ch 75 ns p-ch 80 turn-off time t off p-channel v dd = - 10 v, r l = 65 ? i d ? - 150 ma, v gen = - 4.5 v, r g = 10 ? n-ch 75 p-ch 90
document number: 71426 s10-2544-rev. c, 08-nov-10 www.vishay.com 3 vishay siliconix si1035x n-channel typical characteristics (t a = 25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 5 v thr u 1. 8 v 1 v - on-resistance ( ) r ds(on) 0 10 20 30 40 0 50 100 150 200 250 i d - drain c u rrent (ma) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0. 8 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 10 v i d = 150 ma transfer characteristics capacitance on-resistance vs. junction temperature 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (ma) i d t j = - 55 c 125 c 25 c 0 20 40 60 8 0 100 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss v gs = 0 v f = 1 mhz c- capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 v gs = 4.5 v i d = 200 ma t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs = 1. 8 v i d = 175 ma
www.vishay.com 4 document number: 71426 s10-2544-rev. c, 08-nov-10 vishay siliconix si1035x n-channel typical characteristics (t a = 25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage variance vs. temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1000 1 v sd -) v ( e g a t l o v n i a r d - o t - e c r u o s -so u rce c u rrent (ma) i s t j = 125 c t j = 25 c t j = 50 c 10 100 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage i gss vs. temperature 0 10 20 30 40 50 0123456 d = 175 ma - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d = 200 ma i 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - temperat u re (c) i gss - ( a) v gs = 2. 8 v bv gss vs. temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 t j -temperat u re (c) b v gss - gate-to-so u rce breakdo w n v oltage ( v )
document number: 71426 s10-2544-rev. c, 08-nov-10 www.vishay.com 5 vishay siliconix si1035x p-channel typical characteristics (t a = 25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v gs = 5 v thr u 2.5 v 2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 1. 8 v - on-resistance ( ) r ds(on) 0 5 10 15 20 25 0 200 400 600 8 00 1000 i d - drain c u rrent (ma) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 v ds = 10 v i d = 150 ma - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j = - 55 c 125 c 25 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (ma) i d 0 20 40 60 8 0 100 120 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss c - capacitance (pf) v gs = 0 v f = 1 mhz 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 v gs = 4.5 v i d = 150 ma t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs = 1. 8 v i d = 125 ma
www.vishay.com 6 document number: 71426 s10-2544-rev. c, 08-nov-10 vishay siliconix si1035x p-channel typical characteristics (t a = 25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage variance vs. temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1000 1 v sd -) v ( e g a t l o v n i a r d - o t - e c r u o s t j = 125 c t j = 25 c t j = - 55 c 10 100 i s -so u rce c u rrent (ma) - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage i gss vs. temperature 0 10 20 30 40 50 0123456 i d = 150 ma - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d = 125 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - temperat u re (c) i - ( a) gss v gs = 2. 8 v bv gss vs. temperature -7 -6 -5 -4 -3 -2 -1 0 - 50 - 25 0 25 50 75 100 125 t j -temperat u re (c) b v gss - gate-to-so u rce breakdo w n v oltage ( v )
document number: 71426 s10-2544-rev. c, 08-nov-10 www.vishay.com 7 vishay siliconix si1035x n- or p-channel typi cal characteristics (t a = 25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71426 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 500 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
?? ?? ?? notes: 1. dimensions in millimeters. 2. dimension d does not include mold flash, protrusions or gate burrs. mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension e1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. dimensions d and e1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. datums a, b and d to be determined 0.10 mm from the lead tip. 5. terminal numbers are shown for reference only. 6. these dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 6 ????? ????? ????? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? 4 3 2 4 3 2 5 4 c aaa c m ccc a?b d 2x e b 6x b c aaa 2x d e/2 e c bbb 2x 123 654 e1 e1/2 a d e1 l1 l a b c a1 a1 section b-b detail ?a? see detail ?a? 4 3 2 5 6 package information vishay siliconix document number: 71612 25-jun-01 www.vishay.com 1

tolerances dim min max note symbol of form and position a 0.56 0.60 aaa 0.10 a1 0.00 0.10 bbb 0.10 b 0.15 0.30 ccc 0.10 c 0.10 0.18 d 1.50 1.70 2, 3 e 1.55 1.70 e1 1.20 bsc 2, 3 e 0.50 bsc e1 1.00 bsc l 0.35 bsc l1 0.20 bsc ecn: e-00499?rev. b, 02-jul-01 dwg: 5880
application note 826 vishay siliconix document number: 72605 www.vishay.com revision: 21-jan-08 21 application note recommended minimum pads for sc-89: 6-lead 0.051 (1.300) 0.069 (1.753) 0.019 (0.478) 0.031 (0.798) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) recommended mi nimum pads dimensions in inches/(mm) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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